INIS
ferroelectric materials
100%
polarization
52%
antiferroelectric materials
38%
data
38%
information
38%
applications
34%
relaxation
34%
storage
33%
solids
22%
devices
22%
ceramics
21%
universities
16%
physics
16%
demand
16%
iowa
16%
thin films
16%
tools
15%
curves
15%
trigonal lattices
15%
voltage
15%
x-ray diffraction
15%
randomness
13%
investigations
13%
volatility
13%
travel
11%
power
11%
increasing
11%
moessbauer effect
11%
energy
11%
magnetization
7%
demagnetization
7%
interactions
7%
depolarization
7%
construction
7%
tin 119
7%
readout systems
7%
electric fields
7%
perovskite
7%
removal
7%
symmetry
7%
spectroscopy
7%
dynamics
7%
time resolution
7%
phase transformations
7%
cost
5%
fabrication
5%
grants
5%
data storage devices
5%
architecture
5%
transmission electron microscopy
5%
commercialization
5%
magnetic disks
5%
california
5%
acceleration
5%
testing
5%
electrons
5%
signals
5%
temperature range 0273-0400 k
5%
hypothesis
5%
equivalence principle
5%
Chemistry
Antiferroelectricity
53%
Polarization
52%
Procedure
50%
Antiferroelectric Material
38%
Application
34%
Ferroelectricity
31%
Solid
22%
Memory Effect
16%
Voltage
15%
Moessbauer Spectroscopy
11%
Engineering Process
11%
Polyimide Macromolecule
11%
Device
11%
Demagnetization
7%
Tetragonal Space Group
7%
Ceramic
7%
Depolarization
7%
Sample
7%
Magnetization
7%
Electric Field
7%
Phase Transition
7%
Spectroscopy
7%
Time
7%
Analytical Method
7%
Electron Particle
5%
Acceleration
5%
Physics
Memory
51%
Data Storage
33%
Information
27%
Utilization
26%
Solid State
22%
Universities
16%
Memory Effect
16%
Distortion
15%
Electric Potential
15%
Perovskites
15%
X-Ray Synchrotron Powder Diffraction
15%
Equivalence
11%
Increasing
11%
Technology
11%
Electric Fields
7%
Diffraction Pattern
7%
Phase Transition
7%
Spectroscopy
7%
Ceramics
7%
Room Temperature
5%
Thin Films
5%
Electrons
5%
Transmission Electron Microscopy
5%
Domains
5%
Fabrication
5%
Physics
5%
Estimates
5%