4-state anti-ferroelectric random access memory

Melvin Vopson; Xiaoli Tan

doi:10.1109/LED.2016.2614841

4-state anti-ferroelectric random access memory

Melvin Vopson, Xiaoli Tan

Iowa State University

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Abstract

Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.

Original language	English
Pages (from-to)	1551-1554
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/LED.2016.2614841
Publication status	Published - 3 Oct 2016

Keywords

random access memory
nonvolatile memory
computer architecture
microprocessors
ferroelectic films
capacitors
hysteresis

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10.1109/LED.2016.2614841

EDL_2016_07_1218_R1
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26 Citations
4 Article

Sub-lattice polarization states in anti-ferroelectrics and their relaxation process
Vopson, M., Tan, X., Namvar, E., Belusky, M., Thompson, S., Kuncser, V., Plazaola, F., Unzueta , I. & Tang, C., 1 May 2019, In: Current Applied Physics. 19, 5, p. 651-656 6 p.
Research output: Contribution to journal › Article › peer-review

Open Access
File
188 Downloads (Pure)
The mass-energy-information equivalence principle
Vopson, M., 6 Sept 2019, In: AIP Advances. 9, 4 p., 095206.
Research output: Contribution to journal › Article › peer-review

Open Access
File
642 Downloads (Pure)
Non-equilibrium polarization dynamics in anti-ferroelectrics
Vopson, M. & Tan, X., 7 Jul 2017, In: Physical Review B. 96, 6 p., 014104.
Research output: Contribution to journal › Article › peer-review

Open Access
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219 Downloads (Pure)
Polarization reversal and memory effect in anti-ferroelectric materials
Vopson, M., Caruntu, G. & Tan, X., Feb 2017, In: Scripta Materialia. 128, p. 61-64 4 p.
Research output: Contribution to journal › Article › peer-review

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1 Active

Investigation of novel memory effect in anti-ferroelectric materials
Vopson, M. (PI)
Diamond Light Source
1/02/16 → …
Project: Research

File

3 Visiting an external academic institution
1 Invited talk

Ferroelectric and Antiferroelectric Oxides for Memories
Vopson, M. (Speaker)
8 Nov 2018
Activity: Talk or presentation types › Invited talk
Iowa State University
Vopson, M. (Visiting researcher)
5 Nov 2018 → 15 Nov 2018
Activity: Visiting an external organisation types › Visiting an external academic institution
Western Digital
Vopson, M. (Visiting researcher)
11 Jul 2018 → 18 Jul 2018
Activity: Visiting an external organisation types › Visiting an external academic institution
Diamond Light Source
Vopson, M. (Visiting researcher)
3 Jul 2018 → 6 Jul 2018
Activity: Visiting an external organisation types › Visiting an external academic institution

Cite this

@article{0bf76f8efade41e6b8d0af567406ca71,

title = "4-state anti-ferroelectric random access memory",

abstract = "Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.",

keywords = "random access memory, nonvolatile memory, computer architecture, microprocessors, ferroelectic films, capacitors, hysteresis",

author = "Melvin Vopson and Xiaoli Tan",

year = "2016",

month = oct,

day = "3",

doi = "10.1109/LED.2016.2614841",

language = "English",

volume = "37",

pages = "1551--1554",

journal = " IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - 4-state anti-ferroelectric random access memory

AU - Vopson, Melvin

AU - Tan, Xiaoli

PY - 2016/10/3

Y1 - 2016/10/3

N2 - Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.

AB - Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.

KW - random access memory

KW - nonvolatile memory

KW - computer architecture

KW - microprocessors

KW - ferroelectic films

KW - capacitors

KW - hysteresis

U2 - 10.1109/LED.2016.2614841

DO - 10.1109/LED.2016.2614841

M3 - Article

SN - 0741-3106

VL - 37

SP - 1551

EP - 1554

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

4-state anti-ferroelectric random access memory

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