4-state anti-ferroelectric random access memory

Melvin Vopson, Xiaoli Tan

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    Abstract

    Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.
    Original languageEnglish
    Pages (from-to)1551-1554
    Number of pages4
    Journal IEEE Electron Device Letters
    Volume37
    Issue number12
    DOIs
    Publication statusPublished - 3 Oct 2016

    Keywords

    • random access memory
    • nonvolatile memory
    • computer architecture
    • microprocessors
    • ferroelectic films
    • capacitors
    • hysteresis

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