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4-state anti-ferroelectric random access memory
Melvin Vopson
, Xiaoli Tan
Iowa State University
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peer-review
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Dive into the research topics of '4-state anti-ferroelectric random access memory'. Together they form a unique fingerprint.
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INIS
ferroelectric materials
91%
randomness
58%
ceramics
16%
volatility
16%
data
8%
operation
8%
information
8%
thin films
8%
architecture
8%
polycrystals
8%
polarization
8%
capacitors
8%
Physics
Memory
100%
Technology
16%
Ceramics
16%
Polycrystalline
8%
Information
8%
Media
8%
Memory Effect
8%
Subgroups
8%
Chemistry
Antiferroelectricity
58%
Ferroelectricity
33%
Engineering Process
16%
Capacitor
8%
Ceramic
8%
Memory Effect
8%
Polarization
8%
Material Science
Ferroelectric Material
33%
Cell
16%
Ferroelectric Thin Films
8%