Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires

Tim Clark; P. Nimmatoori; K. Lew; L. Pan; J. Redwing; E. Dickey

doi:10.1021/nl072849k

Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires

Tim Clark
, P. Nimmatoori
, K. Lew
, L. Pan
, J. Redwing
, E. Dickey

Research output: Contribution to journal › Article › peer-review

Abstract

A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1- x Ge x axial heterostructure nanowires grown via Au-mediated low pressure CVD using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.

Original language	English
Pages (from-to)	1246-1252
Number of pages	7
Journal	Nano Letters
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/nl072849k
Publication status	Published - 6 Mar 2008

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title = "Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires",

abstract = "A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1- x Ge x axial heterostructure nanowires grown via Au-mediated low pressure CVD using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.",

author = "Tim Clark and P. Nimmatoori and K. Lew and L. Pan and J. Redwing and E. Dickey",

year = "2008",

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T1 - Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires

AU - Clark, Tim

AU - Nimmatoori, P.

AU - Lew, K.

AU - Pan, L.

AU - Redwing, J.

AU - Dickey, E.

PY - 2008/3/6

Y1 - 2008/3/6

N2 - A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1- x Ge x axial heterostructure nanowires grown via Au-mediated low pressure CVD using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.

AB - A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1- x Ge x axial heterostructure nanowires grown via Au-mediated low pressure CVD using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.

U2 - 10.1021/nl072849k

DO - 10.1021/nl072849k

M3 - Article

SN - 1530-6984

VL - 8

SP - 1246

EP - 1252

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires

Abstract

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