Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Dayu Zhou, Yan Guan, Melvin Marian Vopson, Jin Xu, Hailong Liang, Fei Cao, Xianlin Dong, Johannes Mueller, Tony Schenk, Uwe Schroeder

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    Abstract

    HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2Ec), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films.
    Original languageEnglish
    Pages (from-to)240-246
    Number of pages6
    JournalActa Materialia
    Volume99
    Early online date13 Aug 2015
    DOIs
    Publication statusPublished - 15 Oct 2015

    Keywords

    • Hafnium oxide
    • Ferroelectrics
    • Domain switching
    • Temperature dependence
    • Endurance

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