TY - JOUR
T1 - Electrical characterization of solar sensitive zinc oxide doped-amorphous carbon photodiode
AU - Koç, Mümin Mehmet
AU - Aslan, Naim
AU - Erkovan, Mustafa
AU - Aksakal, Bünyamin
AU - Uzun, Orhan
AU - Farooq, W. Aslam
AU - Yakuphanoğlu, Fahrettin
PY - 2019/2
Y1 - 2019/2
N2 - A new solar-sensitive zinc oxide doped-amorphous carbon diode was fabricated using the electrochemical deposition technique. The current-voltage characteristics of the fabricated Al/ZnO-a:C/p-Si/Al diode were investigated under dark and various lighting intensities using both I-V and C-V methods. The fabricated diode was characterized by XRD, SEM-EDS, FTIR and XPS analysis. Through the analysis, it was determined that the photocurrents increased with increasing intensity of incident light. The capacitance-voltage (C-V) characteristics revealed that the capacitance of the diode depended on voltage, frequency and illumination, indicating the existence of a continuous distribution of interface states. It was found that the capacitance changed drastically with changing frequency and separation was observed in different frequencies, as identified in the reverse bias region. The ideality factor obtained was found to be higher than unity, with the average barrier height and ideality factor of the diode were found to be 0.528 ± 0.0069 eV and 5.24 ± 0.39, respectively. The newly fabricated ZnO-doped amorphous carbon (Al/ZnO-a:C/p-Si/Al) photodiode exhibited good solar sensitivity. The overall results indicated that the fabricated Al/ZnO-a:C/p-Si can be used as a solar sensitive diode in optoelectronic device applications as an alternative to graphene-based materials.
AB - A new solar-sensitive zinc oxide doped-amorphous carbon diode was fabricated using the electrochemical deposition technique. The current-voltage characteristics of the fabricated Al/ZnO-a:C/p-Si/Al diode were investigated under dark and various lighting intensities using both I-V and C-V methods. The fabricated diode was characterized by XRD, SEM-EDS, FTIR and XPS analysis. Through the analysis, it was determined that the photocurrents increased with increasing intensity of incident light. The capacitance-voltage (C-V) characteristics revealed that the capacitance of the diode depended on voltage, frequency and illumination, indicating the existence of a continuous distribution of interface states. It was found that the capacitance changed drastically with changing frequency and separation was observed in different frequencies, as identified in the reverse bias region. The ideality factor obtained was found to be higher than unity, with the average barrier height and ideality factor of the diode were found to be 0.528 ± 0.0069 eV and 5.24 ± 0.39, respectively. The newly fabricated ZnO-doped amorphous carbon (Al/ZnO-a:C/p-Si/Al) photodiode exhibited good solar sensitivity. The overall results indicated that the fabricated Al/ZnO-a:C/p-Si can be used as a solar sensitive diode in optoelectronic device applications as an alternative to graphene-based materials.
KW - Carbon
KW - Electrodeposition technique
KW - Photovoltaic behaviour
KW - Solar sensitive diode
KW - ZnO-a:C
UR - http://www.scopus.com/inward/record.url?scp=85054690471&partnerID=8YFLogxK
U2 - 10.1016/j.ijleo.2018.10.008
DO - 10.1016/j.ijleo.2018.10.008
M3 - Article
AN - SCOPUS:85054690471
SN - 0030-4026
VL - 178
SP - 316
EP - 326
JO - Optik
JF - Optik
ER -
