Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

Tomoki Tsuchiya; Takahide Kubota; Tomoko Sugiyama; Teodor Huminiuc; Atsufumi Hirohata; Koki Takanashi

doi:10.1088/0022-3727/49/23/235001

Exchange bias effects in Heusler alloy Ni₂MnAl/Fe bilayers

Tomoki Tsuchiya, Takahide Kubota, Tomoko Sugiyama, Teodor Huminiuc, Atsufumi Hirohata, Koki Takanashi

School of Mathematics & Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Ni₂MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni₂MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni₂MnAl. The magnetization curves of Ni₂MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H _ex was 55 Oe corresponding to the exchange coupling energy J _k of 0.03 erg cm^-2.

Original language	English
Article number	235001
Number of pages	5
Journal	Journal of Physics D: Applied Physics
Volume	49
Issue number	23
DOIs	https://doi.org/10.1088/0022-3727/49/23/235001
Publication status	Published - 12 May 2016

Keywords

antiferromagnetic material
exchange bias
Heusler alloys
thin films

Access to Document

10.1088/0022-3727/49/23/235001

https://eprints.whiterose.ac.uk/99919/

Cite this

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title = "Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers",

abstract = "Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the N{\'e}el temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H ex was 55 Oe corresponding to the exchange coupling energy J k of 0.03 erg cm-2.",

keywords = "antiferromagnetic material, exchange bias, Heusler alloys, thin films",

author = "Tomoki Tsuchiya and Takahide Kubota and Tomoko Sugiyama and Teodor Huminiuc and Atsufumi Hirohata and Koki Takanashi",

note = "Funding Information: This work was partially supported by Heusler Alloy Replacement for Iridium (HARFIR) under the Strategic International Cooperative Research Program (SICORP) from Japan Science and Technology Agency and the 7th Framework Programme (NMP3-SL-2013-604398) by the European Commission. Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

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doi = "10.1088/0022-3727/49/23/235001",

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AU - Tsuchiya, Tomoki

AU - Kubota, Takahide

AU - Sugiyama, Tomoko

AU - Huminiuc, Teodor

AU - Hirohata, Atsufumi

AU - Takanashi, Koki

N1 - Funding Information: This work was partially supported by Heusler Alloy Replacement for Iridium (HARFIR) under the Strategic International Cooperative Research Program (SICORP) from Japan Science and Technology Agency and the 7th Framework Programme (NMP3-SL-2013-604398) by the European Commission. Publisher Copyright: © 2016 IOP Publishing Ltd.

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N2 - Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H ex was 55 Oe corresponding to the exchange coupling energy J k of 0.03 erg cm-2.

AB - Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H ex was 55 Oe corresponding to the exchange coupling energy J k of 0.03 erg cm-2.

KW - antiferromagnetic material

KW - exchange bias

KW - Heusler alloys

KW - thin films

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