Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers

Tomoki Tsuchiya, Takahide Kubota, Tomoko Sugiyama, Teodor Huminiuc, Atsufumi Hirohata, Koki Takanashi

Research output: Contribution to journalArticlepeer-review


Ni2MnAl Heusler alloy thin films were epitaxially grown on MgO(1 0 0) single crystal substrates by ultra-high-vacuum magnetron sputtering technique. X-ray diffraction and transmission electron microscopy observation revealed that the structures of all the Ni2MnAl thin films were B2-ordered regardless of the deposition temperature ranging from room temperature to 600 °C. The temperature dependence of electrical resistivity showed a kink about 280 K, which was consistent with a reported value of the Néel temperature for antiferromagnetic B2-Ni2MnAl. The magnetization curves of Ni2MnAl/Fe bilayer samples showed a shift caused by the interfacial exchange interaction at 10 K. The maximum value of the exchange bias field H ex was 55 Oe corresponding to the exchange coupling energy J k of 0.03 erg cm-2.

Original languageEnglish
Article number235001
Number of pages5
JournalJournal of Physics D: Applied Physics
Issue number23
Publication statusPublished - 12 May 2016


  • antiferromagnetic material
  • exchange bias
  • Heusler alloys
  • thin films


Dive into the research topics of 'Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers'. Together they form a unique fingerprint.

Cite this