Growth and characterisation of antiferromagnetic ni2mnal heusler alloy films

Teodor Huminiuc; Oliver Whear; Andrew J. Vick; David C. Lloyd; Gonzalo Vallejo-Fernandez; Kevin O’grady; Atsufumi Hirohata

doi:10.3390/magnetochemistry7090127

Growth and characterisation of antiferromagnetic ni₂mnal heusler alloy films

Teodor Huminiuc, Oliver Whear, Andrew J. Vick, David C. Lloyd, Gonzalo Vallejo-Fernandez, Kevin O’grady, Atsufumi Hirohata^*

^*Corresponding author for this work

School of Mathematics & Physics

University of York

Research output: Contribution to journal › Article › peer-review

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Abstract

Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni₂MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.

Original language	English
Article number	127
Number of pages	8
Journal	Magnetochemistry
Volume	7
Issue number	9
DOIs	https://doi.org/10.3390/magnetochemistry7090127
Publication status	Published - 13 Sept 2021

Keywords

Antiferromagnets
Blocking temperature
Exchange bias
Heusler alloys
Spintronic devices
UKRI
EPSRC
EP/M02458X/1
EP/V007211/1

Access to Document

10.3390/magnetochemistry7090127

Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films PDFFinal published version, 1.91 MBLicence: CC BY

https://eprints.whiterose.ac.uk/178023/

Cite this

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title = "Growth and characterisation of antiferromagnetic ni2mnal heusler alloy films",

abstract = "Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.",

keywords = "Antiferromagnets, Blocking temperature, Exchange bias, Heusler alloys, Spintronic devices, UKRI, EPSRC, EP/M02458X/1, EP/V007211/1",

author = "Teodor Huminiuc and Oliver Whear and Vick, {Andrew J.} and Lloyd, {David C.} and Gonzalo Vallejo-Fernandez and Kevin O{\textquoteright}grady and Atsufumi Hirohata",

note = "Funding Information: This workis is partially funded by EU-FP7 HARFIR (NMP3-SL-2013-604398) and Physical Sciences Research Council (EPSRC) (EP/M02458X/1, EP/M02458X/1 and EP/V007211/1) and EP/V007211/1) and Japan Science and Technology Agency (JST) Core Research for Evolutional Science and Technology (CREST) (JPMJCR17J5). Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

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AU - Huminiuc, Teodor

AU - Whear, Oliver

AU - Vick, Andrew J.

AU - Lloyd, David C.

AU - Vallejo-Fernandez, Gonzalo

AU - O’grady, Kevin

AU - Hirohata, Atsufumi

N1 - Funding Information: This workis is partially funded by EU-FP7 HARFIR (NMP3-SL-2013-604398) and Physical Sciences Research Council (EPSRC) (EP/M02458X/1, EP/M02458X/1 and EP/V007211/1) and EP/V007211/1) and Japan Science and Technology Agency (JST) Core Research for Evolutional Science and Technology (CREST) (JPMJCR17J5). Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/9/13

Y1 - 2021/9/13

N2 - Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.

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