Growth and characterisation of antiferromagnetic ni2mnal heusler alloy films

Teodor Huminiuc, Oliver Whear, Andrew J. Vick, David C. Lloyd, Gonzalo Vallejo-Fernandez, Kevin O’grady, Atsufumi Hirohata*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Recent rapid advancement in antiferromagnetic spintronics paves a new path for efficient computing with THz operation. To date, major studies have been performed with conventional metallic, e.g., Ir-Mn and Pt-Mn, and semiconducting, e.g., CuMnAs, antiferromagnets, which may suffer from their elemental criticality and high resistivity. In order to resolve these obstacles, new antiferromagnetic films are under intense development for device operation above room temperature. Here, we report the structural and magnetic properties of an antiferromagnetic Ni2MnAl Heusler alloy with and without Fe and Co doping in thin film form, which has significant potential for device applications.

Original languageEnglish
Article number127
Number of pages8
Issue number9
Publication statusPublished - 13 Sept 2021


  • Antiferromagnets
  • Blocking temperature
  • Exchange bias
  • Heusler alloys
  • Spintronic devices
  • UKRI
  • EP/M02458X/1
  • EP/V007211/1


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