Improving the charge transport in self-assembled monolayer field-effect transistors: from theory to devices

Christof M. Jaeger, Thomas Schmaltz, Michael Novak, Artoem Khassanov, Alexei Vorobiev, Matthias Hennemann, Andreas Krause, Hanno Dietrich, Dirk Zahn, Andreas Hirsch, Marcus Halik, Timothy Clark

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A three-pronged approach has been used to design rational improvements in self-assembled monolayer field-effect transistors: classical molecular dynamics (MD) simulations to investigate atomistic structure, large-scale quantum mechanical (QM) calculations for electronic properties, and device fabrication and characterization as the ultimate goal. The MD simulations reveal the effect of using twocomponent monolayers to achieve intact dielectric insulating layers and a well-defined semiconductor channel. The QM calculations identify improved conduction paths in the monolayers that consist of an optimum mixing ratio of the components. These results have been used both to confirm the predictions of the calculations and to optimize real devices. Monolayers were characterized with X-ray reflectivity measurements and by electronic characterization of complete devices.
Original languageEnglish
Pages (from-to)4893-4900
JournalJournal of the American Chemical Society
Issue number12
Publication statusPublished - 27 Mar 2013

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