Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

S. Yakovlev, J. Zekonyte, C.-H. Solterbeck, M. Es-Souni

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode–film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film–electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms.
    Original languageEnglish
    Pages (from-to)24-29
    JournalThin Solid Films
    Volume493
    Issue number1-2
    Early online date11 Jul 2005
    DOIs
    Publication statusPublished - 22 Dec 2005

    Keywords

    • bismuth ferrite
    • dielectric properties
    • leakage currents
    • interfaces

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