Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

S. Yakovlev; J. Zekonyte; C.-H. Solterbeck; M. Es-Souni

doi:10.1016/j.tsf.2005.06.020

Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

S. Yakovlev, J. Zekonyte, C.-H. Solterbeck, M. Es-Souni

Research output: Contribution to journal › Article › peer-review

Abstract

Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode–film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film–electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms.

Original language	English
Pages (from-to)	24-29
Journal	Thin Solid Films
Volume	493
Issue number	1-2
Early online date	11 Jul 2005
DOIs	https://doi.org/10.1016/j.tsf.2005.06.020
Publication status	Published - 22 Dec 2005

Keywords

bismuth ferrite
dielectric properties
leakage currents
interfaces

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10.1016/j.tsf.2005.06.020

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@article{05369d9c059f44d19e4642ea41aab05c,

title = "Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures",

abstract = "Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode–film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film–electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms.",

keywords = "bismuth ferrite, dielectric properties, leakage currents, interfaces",

author = "S. Yakovlev and J. Zekonyte and C.-H. Solterbeck and M. Es-Souni",

year = "2005",

month = dec,

day = "22",

doi = "10.1016/j.tsf.2005.06.020",

language = "English",

volume = "493",

pages = "24--29",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

AU - Yakovlev, S.

AU - Zekonyte, J.

AU - Solterbeck, C.-H.

AU - Es-Souni, M.

PY - 2005/12/22

Y1 - 2005/12/22

N2 - Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode–film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film–electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms.

AB - Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode–film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film–electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms.

KW - bismuth ferrite

KW - dielectric properties

KW - leakage currents

KW - interfaces

U2 - 10.1016/j.tsf.2005.06.020

DO - 10.1016/j.tsf.2005.06.020

M3 - Article

SN - 0040-6090

VL - 493

SP - 24

EP - 29

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

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Keywords

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