Polycrystalline BiFeO3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO2/Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode–film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film–electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms.
|Journal||Thin Solid Films|
|Early online date||11 Jul 2005|
|Publication status||Published - 22 Dec 2005|
- bismuth ferrite
- dielectric properties
- leakage currents