Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy

S.-J Ding; V. Zaporojtchenko; J. Kruse; J Zekonyte; F. Faupel

doi:10.1007/s00339-002-2031-2

Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy

S.-J Ding, V. Zaporojtchenko, J. Kruse, J Zekonyte, F. Faupel

Research output: Contribution to journal › Article › peer-review

Abstract

The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C-C), and aluminum carbide (Al-C), oxide (Al-O-C) and fluoride (Al-F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum, the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable increases in the C-C, Al-C, Al-O-C and Al-F configurations and a decrease in metallic aluminum. No significant diffusion of aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts as an adhesion promoter and diffusion barrier.

Original language	English
Pages (from-to)	851-856
Journal	Applied Physics A: Materials Science & Processing
Volume	76
Issue number	5
DOIs	https://doi.org/10.1007/s00339-002-2031-2
Publication status	Published - 1 Mar 2003

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title = "Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy",

abstract = "The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C-C), and aluminum carbide (Al-C), oxide (Al-O-C) and fluoride (Al-F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum, the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable increases in the C-C, Al-C, Al-O-C and Al-F configurations and a decrease in metallic aluminum. No significant diffusion of aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts as an adhesion promoter and diffusion barrier.",

author = "S.-J Ding and V. Zaporojtchenko and J. Kruse and J Zekonyte and F. Faupel",

year = "2003",

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T1 - Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy

AU - Ding, S.-J

AU - Zaporojtchenko, V.

AU - Kruse, J.

AU - Zekonyte, J

AU - Faupel, F.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C-C), and aluminum carbide (Al-C), oxide (Al-O-C) and fluoride (Al-F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum, the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable increases in the C-C, Al-C, Al-O-C and Al-F configurations and a decrease in metallic aluminum. No significant diffusion of aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts as an adhesion promoter and diffusion barrier.

AB - The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C-C), and aluminum carbide (Al-C), oxide (Al-O-C) and fluoride (Al-F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum, the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable increases in the C-C, Al-C, Al-O-C and Al-F configurations and a decrease in metallic aluminum. No significant diffusion of aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts as an adhesion promoter and diffusion barrier.

U2 - 10.1007/s00339-002-2031-2

DO - 10.1007/s00339-002-2031-2

M3 - Article

SN - 0947-8396

VL - 76

SP - 851

EP - 856

JO - Applied Physics A: Materials Science & Processing

JF - Applied Physics A: Materials Science & Processing

IS - 5

ER -

Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy

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