Dealing with nanometer-sized particulate contamination is still one of the major challenges during the manufacturing of yielding semiconductor devices. This is especially true for the increasing number of critical processing steps, where residues of particulate matter need to be removed without mechanically damaging sensitive device patterns and, at the same time, achieve the lowest possible substrate loss. If higher substrate loss would be permitted, a more or less pure chemical mechanism could be employed (e.g. particle undercut by substrate etching and lift-off). However, being only allowed to have statistically seen sub-Angstrom material loss, physical forces need to be integrated jointly with the appropriate chemical support. In this paper we describe particle cleaning techniques, which are based on monodisperse droplet impact, controlled bubble cavitation (acoustic and laser induced), moving contact lines as well as normal-directed extensional flow to meet present and future industry requirements.