Ferroelectric thin films of lead zirconate titanate Pb(Zr0.52,Ti0.48)O3(PZT) and bismuth titanate Bi4Ti3O12(BiT) were prepared by photochemical metal-organic deposition as electromechanical transducers used in optoelectronic devices. Both solutions were deposited on flat and convex amorphous glass substrates to poke-charge the device or detect the touch point coordinate on new generation of free-shaped screens. The effects of optimization on UV exposure, precursor type and annealing temperature (600–800 °C) were investigated on microstructural, optical and ferroelectric properties of deposited thin films. Suppressing the non-uniformity of the film thicknesses due to repetitive deposition, actually there is no structural difference between the two types of substrates and their effects on the film properties. Polarization-voltage hysteresis loops showed relatively larger remnant polarization of P r = 9.3 µC/cm2 and 6.1 µC/cm2 for optimized UV-irradiated PZT and BiT thin films, respectively, than uncured samples.