Polarization reversal and memory effect in anti-ferroelectric materials

Melvin Vopson; Gabi Caruntu; Xiaoli Tan

doi:10.1016/j.scriptamat.2016.10.004

Polarization reversal and memory effect in anti-ferroelectric materials

Melvin Vopson, Gabi Caruntu, Xiaoli Tan

Research output: Contribution to journal › Article › peer-review

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Abstract

A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb_0.99Nb_0.02[(Zr_0.57Sn_0.43)_0.94Ti_0.06]_0.98O₃ polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.

Original language	English
Pages (from-to)	61-64
Number of pages	4
Journal	Scripta Materialia
Volume	128
Early online date	13 Oct 2016
DOIs	https://doi.org/10.1016/j.scriptamat.2016.10.004
Publication status	Published - Feb 2017

Keywords

Anti-ferroelectric memory
Antiphase domains
Ferroelectricity
Ferroelectric materials
Electroceramics

Access to Document

10.1016/j.scriptamat.2016.10.004

Polarization reversal and memory effect in anti-ferroelectric materialsAccepted author manuscript (Post-print), 740 KBLicence: CC BY-NC-ND

24 Citations
2 Article

Non-equilibrium polarization dynamics in anti-ferroelectrics
Vopson, M. & Tan, X., 7 Jul 2017, In: Physical Review B. 96, 6 p., 014104.
Research output: Contribution to journal › Article › peer-review

Open Access
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4-state anti-ferroelectric random access memory
Vopson, M. & Tan, X., 3 Oct 2016, In: IEEE Electron Device Letters. 37, 12, p. 1551-1554 4 p.
Research output: Contribution to journal › Article › peer-review

Open Access
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138 Downloads (Pure)

1 Active

Investigation of novel memory effect in anti-ferroelectric materials
Vopson, M.
Diamond Light Source
1/02/16 → …
Project: Research

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2 Visiting an external academic institution
1 Invited talk

Ferroelectric and Antiferroelectric Oxides for Memories
Melvin Vopson (Speaker)
8 Nov 2018
Activity: Talk or presentation types › Invited talk
Iowa State University
Melvin Vopson (Visiting researcher)
5 Nov 2018 → 15 Nov 2018
Activity: Visiting an external organisation types › Visiting an external academic institution
Western Digital
Melvin Vopson (Visiting researcher)
11 Jul 2018 → 18 Jul 2018
Activity: Visiting an external organisation types › Visiting an external academic institution

Cite this

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title = "Polarization reversal and memory effect in anti-ferroelectric materials",

abstract = "A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.",

keywords = "Anti-ferroelectric memory, Antiphase domains, Ferroelectricity, Ferroelectric materials, Electroceramics",

author = "Melvin Vopson and Gabi Caruntu and Xiaoli Tan",

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language = "English",

volume = "128",

pages = "61--64",

journal = "Scripta Materialia",

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T1 - Polarization reversal and memory effect in anti-ferroelectric materials

AU - Vopson, Melvin

AU - Caruntu, Gabi

AU - Tan, Xiaoli

PY - 2017/2

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N2 - A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.

AB - A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.

KW - Anti-ferroelectric memory

KW - Antiphase domains

KW - Ferroelectricity

KW - Ferroelectric materials

KW - Electroceramics

U2 - 10.1016/j.scriptamat.2016.10.004

DO - 10.1016/j.scriptamat.2016.10.004

M3 - Article

VL - 128

SP - 61

EP - 64

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -

Polarization reversal and memory effect in anti-ferroelectric materials

Abstract

Keywords

Access to Document

Fingerprint

Research output

Non-equilibrium polarization dynamics in anti-ferroelectrics

4-state anti-ferroelectric random access memory

Projects

Investigation of novel memory effect in anti-ferroelectric materials

Activities

Ferroelectric and Antiferroelectric Oxides for Memories

Iowa State University

Western Digital

Cite this