Monolayer TiS2 is the lightest member of the transition metal dichalcogenide family with promising applications in energy storage and conversion systems. The use of TiS2 has been limited by the lack of rapid characterization of layer numbers via Raman spectroscopy and its easy oxidation in wet environment. Here, we demonstrate the layer-number-dependent Raman modes for TiS2. 1T TiS2 presents two characteristics of the Raman active modes, A1g (out-of-plane) and Eg (in-plane). We identified a characteristic peak frequency shift of the Eg mode with the layer number and an unexplored Raman mode at 372 cm–1 whose intensity changes relative to the A1g mode with the thickness of the TiS2 sheets. These two characteristic features of Raman spectra allow the determination of layer numbers between 1 and 5 in exfoliated TiS2. Further, we develop a method to produce oxidation-resistant inks of micron-sized mono- and few-layered TiS2 nanosheets at concentrations up to 1 mg/mL. These TiS2 inks can be deposited to form thin films with controllable thickness and nanosheet density over square centimeter areas. This opens up pathways for a wider utilization of exfoliated TiS2 toward a range of applications.
- EP/ M022250/1