Thickness-dependent characterization of chemically exfoliated TiS₂ nanosheets

Monolayer TiS₂ is the lightest member of the transition metal dichalcogenide family with promising applications in energy storage and conversion systems. The use of TiS₂ has been limited by the lack of rapid characterization of layer numbers via Raman spectroscopy and its easy oxidation in wet environment. Here, we demonstrate the layer-number-dependent Raman modes for TiS₂. 1T TiS₂ presents two characteristics of the Raman active modes, A1_g (out-of-plane) and E_g (in-plane). We identified a characteristic peak frequency shift of the E_g mode with the layer number and an unexplored Raman mode at 372 cm–1 whose intensity changes relative to the A1_g mode with the thickness of the TiS₂ sheets. These two characteristic features of Raman spectra allow the determination of layer numbers between 1 and 5 in exfoliated TiS₂. Further, we develop a method to produce oxidation-resistant inks of micron-sized mono- and few-layered TiS₂ nanosheets at concentrations up to 1 mg/mL. These TiS₂ inks can be deposited to form thin films with controllable thickness and nanosheet density over square centimeter areas. This opens up pathways for a wider utilization of exfoliated TiS₂ toward a range of applications.