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Ferroelectric and Antiferroelectric Oxides for Memories

Activity: Talk or presentation types › Invited talk

Dr Melvin Vopson (Speaker), 8 Nov 2018

School of Mathematics & Physics

Invited talk at Iowa State University

8 Nov 2018

External organisation (Academic)

Name	Iowa State University
Acronym	ISU
Web address (URL)	http://www.iastate.edu/
City	Ames
Country	United States

Links

Polarization dynamics in polar and anti-polar dielectrics is a very complex process that is the subject of intensive theoretical and experimental research. Besides the necessity to advance our fundamental understanding of these materials, a unifying model that explains the polarization dynamics in polar and anti-polar dielectrics is extremely beneficial for their technological applications, including non-volatile digital memories. In this lecture, a new theoretical approach to the physics of polarization dynamics is introduced together with its experimental confirmation. The presented model is universally applicable to bulk and thin film dielectrics. It will be shown that the model accounts successfully for the applied electric field, time, and temperature contributions, simultaneously, to produce comprehensive analytical relations for the reversed polarization, switching time, switching current, coercive field, remanent polarization, domain wall velocity and Curie law in ferroelectrics. Moreover, there is recent evidence that the model is applicable not only to polar dielectrics, but also to anti-polar dielectrics, i.e. antiferroelectric materials. These findings will be discussed in the context of their applications to non-volatile memory devices, and a novel concept of antiferroelectric non-volatile random access memory will be presented.

Related information

Projects

Anti ferroelectric materials for non volatile digital data storage applications
Project: Innovation

Outputs

Polarization reversal and memory effect in anti-ferroelectric materials
Research output: Contribution to journal › Article › peer-review
4-state anti-ferroelectric random access memory
Research output: Contribution to journal › Article › peer-review

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ID: 11622135

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