4-state anti-ferroelectric random access memory
Research output: Contribution to journal › Article › peer-review
Original language | English |
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Pages (from-to) | 1551-1554 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 12 |
DOIs | |
Publication status | Published - 3 Oct 2016 |
Documents
- EDL_2016_07_1218_R1
Rights statement: (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Accepted author manuscript (Post-print), 400 KB, PDF document
Licence: Unspecified
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Related information
Outputs
Non-equilibrium polarization dynamics in anti-ferroelectrics
Research output: Contribution to journal › Article › peer-review
Polarization reversal and memory effect in anti-ferroelectric materials
Research output: Contribution to journal › Article › peer-review
Sub-lattice polarization states in anti-ferroelectrics and their relaxation process
Research output: Contribution to journal › Article › peer-review
The mass-energy-information equivalence principle
Research output: Contribution to journal › Article › peer-review
Activities
Iowa State University
Activity: Visiting an external organisation types › Visiting an external academic institution
Diamond Light Source
Activity: Visiting an external organisation types › Visiting an external academic institution
Western Digital
Activity: Visiting an external organisation types › Visiting an external academic institution
Ferroelectric and Antiferroelectric Oxides for Memories
Activity: Talk or presentation types › Invited talk
Projects
Investigation of novel memory effect in anti-ferroelectric materials
Project: Research
ID: 4926919