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4-state anti-ferroelectric random access memory

Research output: Contribution to journalArticlepeer-review

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4-state anti-ferroelectric random access memory. / Vopson, Melvin; Tan, Xiaoli.

In: IEEE Electron Device Letters, Vol. 37, No. 12, 03.10.2016, p. 1551-1554.

Research output: Contribution to journalArticlepeer-review

Harvard

Vopson, M & Tan, X 2016, '4-state anti-ferroelectric random access memory', IEEE Electron Device Letters, vol. 37, no. 12, pp. 1551-1554. https://doi.org/10.1109/LED.2016.2614841

APA

Vopson, M., & Tan, X. (2016). 4-state anti-ferroelectric random access memory. IEEE Electron Device Letters, 37(12), 1551-1554. https://doi.org/10.1109/LED.2016.2614841

Vancouver

Vopson M, Tan X. 4-state anti-ferroelectric random access memory. IEEE Electron Device Letters. 2016 Oct 3;37(12):1551-1554. https://doi.org/10.1109/LED.2016.2614841

Author

Vopson, Melvin ; Tan, Xiaoli. / 4-state anti-ferroelectric random access memory. In: IEEE Electron Device Letters. 2016 ; Vol. 37, No. 12. pp. 1551-1554.

Bibtex

@article{0bf76f8efade41e6b8d0af567406ca71,
title = "4-state anti-ferroelectric random access memory",
abstract = "Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.",
keywords = "random access memory, nonvolatile memory, computer architecture, microprocessors, ferroelectic films, capacitors, hysteresis",
author = "Melvin Vopson and Xiaoli Tan",
year = "2016",
month = oct,
day = "3",
doi = "10.1109/LED.2016.2614841",
language = "English",
volume = "37",
pages = "1551--1554",
journal = " IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "IEEE",
number = "12",

}

RIS

TY - JOUR

T1 - 4-state anti-ferroelectric random access memory

AU - Vopson, Melvin

AU - Tan, Xiaoli

PY - 2016/10/3

Y1 - 2016/10/3

N2 - Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.

AB - Ferroelectric random access memory (FRAM) is a 2-state non-volatile memory, in which information is digitally encoded using switchable remanent polarization states within a ferroelectric thin film capacitor. Here we propose a novel nonvolatile memory based on anti-ferroelectric polycrystalline ceramics, termed anti-ferroelectric random access memory (AFRAM). The AFRAM memory cell architecture is similar to FRAM, but it requires a more complex operation protocol. Our initial experimental demonstration of the memory effect in antiferroelectric ceramic shows, remarkably, that the AFRAM technology encodes data in both ferroelectric sublattices of the anti-ferroelectric medium. This results in a 4-state non-volatile memory capable of storing 2 digital bits simultaneously, unlike the FRAM technology that has 2-memory states and it is capable to store 1 digital bit per cell.

KW - random access memory

KW - nonvolatile memory

KW - computer architecture

KW - microprocessors

KW - ferroelectic films

KW - capacitors

KW - hysteresis

U2 - 10.1109/LED.2016.2614841

DO - 10.1109/LED.2016.2614841

M3 - Article

VL - 37

SP - 1551

EP - 1554

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -

ID: 4926919