Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
Research output: Contribution to journal › Article › peer-review
HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2Ec), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films.
| Original language | English |
|---|---|
| Pages (from-to) | 240-246 |
| Number of pages | 6 |
| Journal | Acta Materialia |
| Volume | 99 |
| Early online date | 13 Aug 2015 |
| DOIs | |
| Publication status | Published - 15 Oct 2015 |
Documents
- Paper_Acta_Materialia_2015
Accepted author manuscript (Post-print), 1.19 MB, PDF document
Licence: CC BY-NC-ND
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Outputs
Non-equilibrium polarization dynamics in anti-ferroelectrics
Research output: Contribution to journal › Article › peer-review
ID: 2835358
