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Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Research output: Contribution to journalArticlepeer-review

  • Dayu Zhou
  • Yan Guan
  • Dr Melvin Vopson
  • Jin Xu
  • Hailong Liang
  • Fei Cao
  • Xianlin Dong
  • Johannes Mueller
  • Tony Schenk
  • Uwe Schroeder
HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2Ec), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films.
Original languageEnglish
Pages (from-to)240-246
Number of pages6
JournalActa Materialia
Volume99
Early online date13 Aug 2015
DOIs
Publication statusPublished - 15 Oct 2015

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