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Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

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Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. / Zhou, Dayu; Guan, Yan; Vopson, Melvin Marian; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe.

In: Acta Materialia, Vol. 99, 15.10.2015, p. 240-246.

Research output: Contribution to journalArticlepeer-review

Harvard

Zhou, D, Guan, Y, Vopson, MM, Xu, J, Liang, H, Cao, F, Dong, X, Mueller, J, Schenk, T & Schroeder, U 2015, 'Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films', Acta Materialia, vol. 99, pp. 240-246. https://doi.org/10.1016/j.actamat.2015.07.035

APA

Zhou, D., Guan, Y., Vopson, M. M., Xu, J., Liang, H., Cao, F., Dong, X., Mueller, J., Schenk, T., & Schroeder, U. (2015). Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. Acta Materialia, 99, 240-246. https://doi.org/10.1016/j.actamat.2015.07.035

Vancouver

Author

Zhou, Dayu ; Guan, Yan ; Vopson, Melvin Marian ; Xu, Jin ; Liang, Hailong ; Cao, Fei ; Dong, Xianlin ; Mueller, Johannes ; Schenk, Tony ; Schroeder, Uwe. / Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films. In: Acta Materialia. 2015 ; Vol. 99. pp. 240-246.

Bibtex

@article{bc2cf1d6928c41848c08cf7245d10951,
title = "Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films",
abstract = "HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2Ec), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films.",
keywords = "Hafnium oxide, Ferroelectrics, Domain switching, Temperature dependence, Endurance",
author = "Dayu Zhou and Yan Guan and Vopson, {Melvin Marian} and Jin Xu and Hailong Liang and Fei Cao and Xianlin Dong and Johannes Mueller and Tony Schenk and Uwe Schroeder",
note = "12 months embargo",
year = "2015",
month = oct,
day = "15",
doi = "10.1016/j.actamat.2015.07.035",
language = "English",
volume = "99",
pages = "240--246",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",

}

RIS

TY - JOUR

T1 - Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

AU - Zhou, Dayu

AU - Guan, Yan

AU - Vopson, Melvin Marian

AU - Xu, Jin

AU - Liang, Hailong

AU - Cao, Fei

AU - Dong, Xianlin

AU - Mueller, Johannes

AU - Schenk, Tony

AU - Schroeder, Uwe

N1 - 12 months embargo

PY - 2015/10/15

Y1 - 2015/10/15

N2 - HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2Ec), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films.

AB - HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2Ec), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films.

KW - Hafnium oxide

KW - Ferroelectrics

KW - Domain switching

KW - Temperature dependence

KW - Endurance

UR - http://www.sciencedirect.com/science/article/pii/S1359645415005066

U2 - 10.1016/j.actamat.2015.07.035

DO - 10.1016/j.actamat.2015.07.035

M3 - Article

VL - 99

SP - 240

EP - 246

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

ER -

ID: 2835358