Polarization reversal and memory effect in anti-ferroelectric materials
Research output: Contribution to journal › Article
A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.
| Original language | English |
|---|---|
| Pages (from-to) | 61-64 |
| Number of pages | 4 |
| Journal | Scripta Materialia |
| Volume | 128 |
| Early online date | 13 Oct 2016 |
| DOIs | |
| Publication status | Published - Feb 2017 |
Documents
- Polarization reversal and memory effect in anti-ferroelectric materials
Accepted author manuscript (Post-print), 740 KB, PDF document
Licence: CC BY-NC-ND
Related information
Outputs
Non-equilibrium polarization dynamics in anti-ferroelectrics
Research output: Contribution to journal › Article
4-state anti-ferroelectric random access memory
Research output: Contribution to journal › Article
Activities
Iowa State University
Activity: Visiting an external organisation types › Visiting an external academic institution
Western Digital
Activity: Visiting an external organisation types › Visiting an external academic institution
Ferroelectric and Antiferroelectric Oxides for Memories
Activity: Talk or presentation types › Invited talk
Projects
Investigation of novel memory effect in anti-ferroelectric materials
Project: Research
ID: 4927022
