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Polarization reversal and memory effect in anti-ferroelectric materials

Research output: Contribution to journalArticlepeer-review

A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.
Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalScripta Materialia
Early online date13 Oct 2016
Publication statusPublished - Feb 2017


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