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Sub-lattice polarization states in anti-ferroelectrics and their relaxation process

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Sub-lattice polarization states in anti-ferroelectrics and their relaxation process. / Vopson, Melvin; Tan, Xiaoli; Namvar, Esmaeil; Belusky, Michal; Thompson, Stephen ; Kuncser, Victor; Plazaola, Fernando; Unzueta , Iraultza; Tang, Chiu.

In: Current Applied Physics, Vol. 19, No. 5, 01.05.2019, p. 651-656 .

Research output: Contribution to journalArticle

Harvard

Vopson, M, Tan, X, Namvar, E, Belusky, M, Thompson, S, Kuncser, V, Plazaola, F, Unzueta , I & Tang, C 2019, 'Sub-lattice polarization states in anti-ferroelectrics and their relaxation process', Current Applied Physics, vol. 19, no. 5, pp. 651-656 . https://doi.org/10.1016/j.cap.2019.03.009

APA

Vopson, M., Tan, X., Namvar, E., Belusky, M., Thompson, S., Kuncser, V., Plazaola, F., Unzueta , I., & Tang, C. (2019). Sub-lattice polarization states in anti-ferroelectrics and their relaxation process. Current Applied Physics, 19(5), 651-656 . https://doi.org/10.1016/j.cap.2019.03.009

Vancouver

Vopson M, Tan X, Namvar E, Belusky M, Thompson S, Kuncser V et al. Sub-lattice polarization states in anti-ferroelectrics and their relaxation process. Current Applied Physics. 2019 May 1;19(5):651-656 . https://doi.org/10.1016/j.cap.2019.03.009

Author

Vopson, Melvin ; Tan, Xiaoli ; Namvar, Esmaeil ; Belusky, Michal ; Thompson, Stephen ; Kuncser, Victor ; Plazaola, Fernando ; Unzueta , Iraultza ; Tang, Chiu. / Sub-lattice polarization states in anti-ferroelectrics and their relaxation process. In: Current Applied Physics. 2019 ; Vol. 19, No. 5. pp. 651-656 .

Bibtex

@article{b7d6bbfa4ecc420092805144d78565a9,
title = "Sub-lattice polarization states in anti-ferroelectrics and their relaxation process",
abstract = "We report studies of quasi-remanent polarization states in Pb0.99Nb0.02 [(Zr0.57Sn0.43) 0.94Ti0.06] 0.98O3 (PNZST) anti-ferroelectric ceramics and investigation of their relaxation effects using unique insitu electrically activated time-resolved Synchrotron X-ray powder diffraction (SXPD) and 119Sn M{\"o}ssbauer Spectroscopy (MS). The SXPD patterns are consistent with a phase transition from quasi-tetragonal perovskite in 0V relaxed anti-ferroelectric state to rhombohedral distortion in ferroelectric state under saturating applied voltages of 2kV. The observed quasi-remanent polarization relaxation processes are due to the fact that tetragonal to rhombohedral distortion does not occur at the applied voltage required to access the quasi-remanent polarization states, and the tetragonal symmetry restored after the removal of the applied electric field is preserved. Since these quasi-remanent polarization states were seen as possibly suitable for memory applications, the implications of this study are that anti-ferroelectrics are more feasible for multi-state dynamic random access memories (DRAM), while their application to non-volatile memories requires development of more sophisticated {"}read-out{"} protocols, possibly involving dc electrical biasing.",
keywords = "polarization relaxation, anti-polar materials, solid state memories, time resolved synchrotron measurements, Mossbauer spectroscopy, RCUK, EPSRC, EP/R028656/1",
author = "Melvin Vopson and Xiaoli Tan and Esmaeil Namvar and Michal Belusky and Stephen Thompson and Victor Kuncser and Fernando Plazaola and Iraultza Unzueta and Chiu Tang",
note = "12 MONTH EMBARGO",
year = "2019",
month = may,
day = "1",
doi = "10.1016/j.cap.2019.03.009",
language = "English",
volume = "19",
pages = "651--656 ",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "5",

}

RIS

TY - JOUR

T1 - Sub-lattice polarization states in anti-ferroelectrics and their relaxation process

AU - Vopson, Melvin

AU - Tan, Xiaoli

AU - Namvar, Esmaeil

AU - Belusky, Michal

AU - Thompson, Stephen

AU - Kuncser, Victor

AU - Plazaola, Fernando

AU - Unzueta , Iraultza

AU - Tang, Chiu

N1 - 12 MONTH EMBARGO

PY - 2019/5/1

Y1 - 2019/5/1

N2 - We report studies of quasi-remanent polarization states in Pb0.99Nb0.02 [(Zr0.57Sn0.43) 0.94Ti0.06] 0.98O3 (PNZST) anti-ferroelectric ceramics and investigation of their relaxation effects using unique insitu electrically activated time-resolved Synchrotron X-ray powder diffraction (SXPD) and 119Sn Mössbauer Spectroscopy (MS). The SXPD patterns are consistent with a phase transition from quasi-tetragonal perovskite in 0V relaxed anti-ferroelectric state to rhombohedral distortion in ferroelectric state under saturating applied voltages of 2kV. The observed quasi-remanent polarization relaxation processes are due to the fact that tetragonal to rhombohedral distortion does not occur at the applied voltage required to access the quasi-remanent polarization states, and the tetragonal symmetry restored after the removal of the applied electric field is preserved. Since these quasi-remanent polarization states were seen as possibly suitable for memory applications, the implications of this study are that anti-ferroelectrics are more feasible for multi-state dynamic random access memories (DRAM), while their application to non-volatile memories requires development of more sophisticated "read-out" protocols, possibly involving dc electrical biasing.

AB - We report studies of quasi-remanent polarization states in Pb0.99Nb0.02 [(Zr0.57Sn0.43) 0.94Ti0.06] 0.98O3 (PNZST) anti-ferroelectric ceramics and investigation of their relaxation effects using unique insitu electrically activated time-resolved Synchrotron X-ray powder diffraction (SXPD) and 119Sn Mössbauer Spectroscopy (MS). The SXPD patterns are consistent with a phase transition from quasi-tetragonal perovskite in 0V relaxed anti-ferroelectric state to rhombohedral distortion in ferroelectric state under saturating applied voltages of 2kV. The observed quasi-remanent polarization relaxation processes are due to the fact that tetragonal to rhombohedral distortion does not occur at the applied voltage required to access the quasi-remanent polarization states, and the tetragonal symmetry restored after the removal of the applied electric field is preserved. Since these quasi-remanent polarization states were seen as possibly suitable for memory applications, the implications of this study are that anti-ferroelectrics are more feasible for multi-state dynamic random access memories (DRAM), while their application to non-volatile memories requires development of more sophisticated "read-out" protocols, possibly involving dc electrical biasing.

KW - polarization relaxation

KW - anti-polar materials

KW - solid state memories

KW - time resolved synchrotron measurements

KW - Mossbauer spectroscopy

KW - RCUK

KW - EPSRC

KW - EP/R028656/1

U2 - 10.1016/j.cap.2019.03.009

DO - 10.1016/j.cap.2019.03.009

M3 - Article

VL - 19

SP - 651

EP - 656

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 5

ER -

ID: 13400629